ST-IGBT命名规则

AI：

Mexlule类型

A1= ACEPACK 1

Al = ACEPACK 2

P：

配置

T=12-Pack

P Sixpack (3phase Full Bridge)

C= Corverter inverter Brake (CIB)

H=HelfBridge

U= Three Level

TB= Triple Boost

25：

Current Indication (DC) for IGBT

Max Ros(on) for MOSFET

S：

二极管特性

S= Soft diode

W=SiC Diode

12：

重复峰值反向电压

2位数乘以100

M：

系列

H=HelfBridge

V=Very Fast IGBTs

M=Low Loss IGBTs

S=Low VCESAT IGBTs

W=SiC MOSFET

M5=MDMESH V

Fx：

系列附加选项

F=Press Fit

C=Capacitor inside

STG：

WA：

Available packages

A=D PAK*

B=D PAK

D=DPAK

F=TO-220FP

FW=TO-3PF

P=TO-220

W=TO-247

WA=TO-247 long Leads

w...-4=TO-247-4

WT=TO-3P

YA =Max247 long Leads

50：

MAX CONTINUOUS COLLECTOR

CURRENT @100C

M：

IGBT SERIES

H 600V= Medium speed (8~ 30 kHz)

H...B(2)= High speed(16~60 kHz)

V= Very high speed (50~100kHz)

M= Low loss(2~20 kHz)

S=Low drop (up to 8 kHz)

H 1200V = High speed (20~100 kHz)

IH(2)= soft switching(8~ 60 kHz)

65:

BREAKDOWN

VOLTAGE 10

D:

DIODE Options

D=Very fast recovery

DL=Low forward voltage(*)

(*)for sofi-switching applications only

F:

F =Trench gate field stop technology