ST-MOSFET命名规则
ST
X
代码 | 封装 |
---|---|
R | SOT-23 |
T | SOT-23-6L |
N | SOT-223 |
S | SO-8 |
D | DPAK |
L | PowerPLAT |
LD | Power FLAT |
B | D PAK |
E | ISOTOP |
F | TO-220FP |
FH | TO-220FPwide creepage |
FI | FPAKFP |
FU | TO-220FP nanow leade |
FW | TO-3PF |
H | HPAK-2H PAK-6 |
I | FPAK |
K | LPPAK |
O | TO-LL |
P | TO-220 |
O | TO-92 |
U | IPAK(-S for short leads) |
V | Power SO-10 |
W | TO-247(-4for leads) |
WA | TO-247 long leads |
Y | Max247 |
20
电流范围 |
N
Breakdown voltage÷10 |
95
代码 | 沟道 |
---|---|
N | N-channel |
P | P-channel |
N...N | N.N Two difenent N-shannel dice |
N...P | N.P I Complermenlary Pat |
DM or DP | Dual N-Ch or dual P-Ch |
DS or PS | N-Ch or P-Ch plus schotlltoy Diode |
Y
代码 | 描述 |
---|---|
C | Current sehsing |
D | Fast recovery diode |
L | Logic level 5V chive optimized |
LL | Logic level 4.5V drive optimized |
T | Temperahure sersing |
V | Super logic level(2.5V-2.7V drive) |
U | Ultra logic level (1.8V drive) |
Z | Ctamped by Zener diode(33V) |
K5
代码 | 描述 |
---|---|
H5 | StripFET H5(12V,30V) |
H6 | StripFET H6(-30V,30V) |
H7 | StripFET H7(-20V,30V) |
F3 | StripFET F3(40V to 100V) |
F5 | StripFET F5(40V) |
F6 | StripFET F6(-100V to 80V) |
F7 | StriPFET F3(40V to 120V)) |
M2 | MDmesh M2(400V to 650V) |
Dm2 | MDmesh |
M2-EP | MDmeshM2 EP(650V) |
M6 | MDmeshTM |
M5 | MDmeshM5(550V,650V) |
K3 | Super MeSH K3≥400V |
K5 | MDmeshK5(800V to1500V) |
DKS | MDmesh DK5(≥ 950V up to 1050V) |
ST IPM命名规则:
SLLIMM 2nd series nomenclature
ST
G
IGBT based |
I
SLLMM (Inteligent Power M odule) |
X
封装 |
B=DBC |
F=Full Malded |
5
Max Continuous |
Current (DC)@80℃ |
CH
IGBTs Technology Speed |
CH=4-32 kHz |
M=up to 20 kH2 |
yz
Temperature sensing/prot ection |
T=NTC on board option |
S=Temperaure sensing |
60
Breakdown |
Voltage /10 |
L
Leads finish option |
E=Short leads and emitter forward |
L=Long leads |
SLLIMM-nano 2nd series nomenclature
ST
G
IGBT based |
IP
SLLMM(Inteligent Power Module) |
X
封装 |
Q= SLLIMM-nano |
Q= SLLIMM-nano |
5
Continuous current @25℃ |
y
Technology Series |
H=planar IGBT based |
C=TFS IGBT based |
T-H
Leads finish option |
L=in Line |
Z=Zig-Zag |
S=without stand-off |
60
Breakdown |
Voltage /10 |
W
Special features |
T=NTC on board |
H=STD Input Low |
Side Driving |
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