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1. ScreenOxide Growth
首先是P型衬底上面有一层外延生长的Si
2. N-Well and P-Well Definiton
定义N-Well和P-Well
3. Photoresist Strip Pad Oxide Growth
然后去除光刻胶和Screen Oxide
4. SiliconNitrideHardMaskDeposition
接下来的是Fin的形成
先是通过CVD工艺形成一层Silicon Ntride
5. Mandrel Patterning
接着coating BARC和PR进行曝光
6. Mandrel Etch and PR Strip
etch向下吃到Silicon Nitride层停止
7. Oxide Space Formation
CVD工艺deposit一层Oxide Layer
8. Mandrel Removal Nitride Etch
然后通过etch 吃掉 Amorphous Carbon Mandrel层
9. Fin Etch Trench Liner Growth
Oxide Spacer和Nitride作为Hard Mask继续向下etch
10. Trench Liner Removal Fin Removal Photo
然后通过etch去除oxide trench liner
11. Fin Removal
多余的Fin移除前后对比图如下
12. TEOS deposition
然后通过CVD填充一层厚厚的TEOS
13. Nitride Removal TEOS Etch-Back
通过热磷酸溶液去除多余的silicon nitride
14. AlternateWell Implant Methodology
前面第2步已经通过离子注入定义了P/N-Well
15. ESL Growth Amorphous Silicon Deposition
然后在Fin上通过热氧化生成一层oxide作为 etch stop layer(ESL)
16. Amorphous Silicon Depositon Patterning
然后CMP磨平 Amorphous Silicon
17. Hard Mask Patterning and Etch
曝光
18. 2nd Gate Electrode Patterning
这一步主要是把右边多余的dummyGate去掉
19. Offset Spacer Deposition
接下来先通过热氧化生成一层poly oxide
20.NMOSExtension Implant
铺上PR和BARC
21. PMOS Extension Implant
同理在PMOS区域进行硼离子注入
22. Extension Anneal
由于离子注入后晶格有损失
23. Nitride Spacer Deposition Etch
接下来deposit一层silicon Nitride
24.Nitride Spacer Morphology
Nitride Spacer形成后
25. Hard MaskDepositionPatterning
然后deposit一层SiCN做为Hard Mask
26. Hard MaskEtch PMOS Fin Removal
SiCN作为Hard Mask
27. SiGe Deposition HardMask Removal
接着进行SiGe外延生长
28. Hard Mask Deposition Patterning
同理
**NMOS区域有两种选择方案
29. Hard Mask Etch Oxide Strip
NMOS 区域进行Hard Mask etch
30.#1 Epitaxial Si Growth Hard Mask Strip
然后在Fin上外延生长一层Si
31. #2 NMOSFin Removal SiC Epitaxial Deposition
将NMOS Fin全部移除
32. SiCN Hard Mask Strip Silicon Implant
移除SiCN Hard Mask层
33. Oxide Strip Al Salicide Implant
用HF移除Gate, Source, Drain上面的oxide
34.ColdTitanium Deposition Anneal
然后通过PVD的方式在表面形成一层Titanium
35. Unreacted Titanium Strip
没有反应的Titanium位于spacer sidewall and STI上面
36. Oxide/Nitride Etch-Stop Laryer Deposition
wafer用P/SC1溶剂清洗
37. PMD Deposition and Polish-Back
然后deposit一层厚厚的PSG(Phospho-Silicate Glass)
38. Polysiliocn Gate Removal
然后通过etch将dummy gate里的amorphous silicon移除
39. Oxide ESL Removal
然后通过etch移除Fin上面的oxide layer
40. Bottom Interface Oxide Layer Growth
然后通过低温氧化反应在Fin表面形成一层oxide
中篇到此为止
41.High-k Dielectric Deposition
接下来ALD(Atomic Layer Deposition)工艺deposit一层High-k Hafnium oxide(氧化铪)做为电介质
42. PMOS Metal(TiN) Deposition
ALD工艺在PMOS区域deposit一层功函数金属gate TiN
43. TaN Deposition
然后deposit一层TaN做为Etch Stop Layer
44.PMOS Metal(TiN)Deposition
同理
45. PMOS Metal Patterning
然后铺上一层PR
46. NMOS Metal Etch
NMOS区域的TiN Layer被etch完
47.Photoresist Strip
然后拔除PR
48. NMOS Metal Deposition
然后通过SIPVD(Self Inoizing Phsical Vapor Deposition)工艺在NMOS/PMOS区域deposit一层TiAl金属
49. NMOS Metal Anneal
在一定温度下
50. Tungsten Deposition Back-Fill
然后deposit一层厚厚的金属钨
51. Tungsten Metal Polish
然后CMP工艺磨平金属钨
52. The FinFET Self Aligned Contacts
这里的contact用了SAC(Self-Aligned Contact)工艺
53. Gate Metal Etch-Back
金属钨和Metal gate被etch back
54. SiON Back-Fill
然后CVD deposit一层SiON
55. SiON Polish-Back
下一步是通过CMP磨平
56. PMD Completion
然后再deposit一层厚厚的PSG做为PMD(Pre-Metal Dielectri)
57.Tungsten Trench Contacts; Patterning
然后铺上PR
58.Ti/TiN Barrier Deposition
经过清洗干净后
59. Tungsten Deposition Polish-Back
然后开始通过CVD deposit一层厚厚的金属钨
到此为止
FinFET由美籍华人科学家胡正明(Chenming Hu)教授在1999年提出来
来自:公众号 芯爵
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